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MXenes-Max 2D transition metal carbonitride
MBene two-MAB-dimensional transition metal borides
MOFs metal organic framework compound
COFs covalent organic compound
Bioluminescent dyes
Aerogels
CVD TMDC 2D thin film / heterojunction
Perovskite material
Copper-doped modified lead apatite (LK 99 crystal powder)
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Two-dimensional material micro-nano processing - in situ testing
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Nucleic acid extraction kit
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MXenes 2D transition metal carbonitride
MBene two-dimensional transition metal borides
beike new material
position： home > Product > Two-dimensional material micro-nano processing - in situ testing> Micro and nano devices

Two-dimensional material micro-nano processing - in situ testing
Two dimensional material transfer system Heterojunction customization Customized wafer consumables Micro and nano devices
Electrode customization Transient absorption spectrum Monocrystalline silicon substrate GaN wafer
FET devices Two-dimensional material device Design and processing Photoelectric comprehensive test system
Photocurrent test system Spectrum test system
price
500元    501-1000元    1001-2000元    2000元以上

Photo ID/CAS Item ID Name/specification price

MoSe2 FET array, CVD MoSe2 FET array BK2022062007
  MoSe2 FET array, CVD MoSe2 FET array
BK2022062007 一片装
$ 2062
Graphene transistors, GFETs BK2022050905
  Graphene transistors, GFETs
BK2022050905 1cm*1cm
$ 562
Molybdenum disulfide FET, MoS2 FET BK2022050902
  Molybdenum disulfide FET, MoS2 FET
BK2022050902 1片装1 cm*1cm，SiO2/Si基底
$ 2062
Tungsten Disulfide FET, WS2 FET BK2022050901
  Tungsten Disulfide FET, WS2 FET
BK2022050901 1片装1cm*1cm ;SiO2/Si基底
$ 2062
Tungsten Diselenide FET, WSe2 FET BK2022050901
  Tungsten Diselenide FET, WSe2 FET
BK2022050901 1片装1cm*1cm SiO2/Si基底
$ 2062
BP FET Black Phosphorus FET, Mechanically Stripped Black Phosphorus Transistor BK2022050701
  BP FET Black Phosphorus FET, Mechanically Stripped Black Phosphorus Transistor
BK2022050701-04 Raman测试数据
BK2022050701-03 转移特性测试数据
BK2022050701-02 IV测试数据
BK2022050701-01 黑磷FET+金电极
$ 562
Single-layer 2H MoTe2 FET device BK2022050606
  Single-layer 2H MoTe2 FET device
BK2022050606-05 1片装转移曲线原始数据测试
BK2022050606-04 1片装IV原始数据测试
BK2022050606-03 1片装Raman原始数据测试
BK2022050606-02 1片装单层MoTe2 FET
BK2022050606-01 1片装不带电极剥离单层MoTe2
$ 450
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