Device structure: Gold electrode/WS2/300nmSiO2/Si back gate FET
WS2, single layer, few layers (~3 layers, ~5 layers), multi-layer ~10 layers
| Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body |
| Item ID | CAS | ID | Pack | Parameter | Stock | Make up | Price |
| BK2022062002-01 | BK2022062002 | 1片装 | 单层WS2 FET | 100 | $750 | ||
| BK2022062002-02 | BK2022062002 | 1片装 | 少层WS2 FET | 100 | $750 | ||
| BK2022062002-03 | BK2022062002 | 1片装 | 多层WS2 FET | 100 | $750 |
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| Reminder: Beijing Beike New Material Technology Co., Ltd. supplies products only for scientific research, not for humans |
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