ID：BK2020081714
CAS：
price： $190
Item ID：BK2020081714-02
specification：
5 minutes to choose the product plan
E-mail：mxenes@163.com
| Product number | GaN-T-C-P-C50 |
| Size | Ф50.8 ± 0.1 mm |
| Thickness | 4.5±0.5 μm |
| Crystal orientation | C-plane(0001) ± 0.5° |
| Conductivity type | P-type(Mg-doped) |
| Resistivity (300 K) | ~10Ω·cm |
| Carrier concentration | > 6x1016cm-3 |
| Mobility | ~ 10cm2/V•s |
| Dislocation density | Less than 5x108cm-2(estimated by FWHMs of XRD) |
| Substrate structure | GaN on sapphire (standard :SSP option:DSP) |
| Effective area | >90% |
| package |
Packaged in a class 100 clean room environment, in cassette of 25pcs or single container , under a nitrogen atmosphere. |
| Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body |
| Item ID | CAS | ID | Pack | Parameter | Stock | Make up | Price |
| BK2020081714-01 | BK2020081714 | 单抛 | 4.5±0.5μm | 100 | $180 | ||
| BK2020081714-02 | BK2020081714 | 双抛 | 4.5±0.5μm | 100 | $190 |
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| Reminder: Beijing Beike New Material Technology Co., Ltd. supplies products only for scientific research, not for humans |
| All rights reserved © 2019 beijing beike new material Technology Co., Ltd 京ICP备16054715-2号 |
