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MXenes 2D transition metal carbonitride
MBene two-dimensional transition metal borides

2-inch GaN thick film wafer (Si doped)





ID:BK2020081713
CAS:
price: $280
Item ID:BK2020081713-04
specification:
Detailed

Performance parameters:

  • Product number GaN-T-C-N-C50
    Size Ф50.8 ± 0.1 mm
    Thickness 4.5±0.5 μm, 20±2 μm
    Crystal orientation C-plane(0001) ± 0.5°
    Conductivity type N-type(Si-doped)
    Resistivity (300 K) < 0.05Ω·cm
    Carrier concentration >  1x1018cm-3
    Mobility ~ 200cm2/V•s
    Dislocation density Less than 5x108 cm-2(estimated by FWHMs of XRD)
    Substrate structure GaN on sapphire (standard :SSP option:DSP)
    Effective area >90%
    package Packaged in a class 100 clean room environment, in cassette of 25pcs
    or single container , under a nitrogen atmosphere.




Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body

Item ID CAS ID Pack Parameter Stock Make up Price
BK2020081713-01 BK2020081713 单抛 4.5±0.5μm 100 $140
BK2020081713-02 BK2020081713 单抛 20±2μm 100 $270
BK2020081713-03 BK2020081713 双抛 4.5±0.5μm 100 $150
BK2020081713-04 BK2020081713 双抛 20±2μm 100 $280
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