| Product number | GaN-T-C-U-C50 |
| Size | 50.8 ± 1 mm |
| Thickness | 350 ± 25 μm |
| Crystal orientation | C-plane(0001) ± 0.5° |
| Conductivity type | N-type(Undoped) |
| Resistivity (300 K) | < 0.5 Ω·cm for N-type (Undoped; GaN-FS-C-U-C50) |
| Carrier concentration | < 5x1017cm-3 |
| Mobility | ~ 300cm2/V•s |
| Dislocation density | Less than 5x108 cm-2(estimated by FWHMs of XRD) |
| Substrate structure | GaN on sapphire (standard :SSP option:DSP) |
| Effective area | >90% |
| package |
Packaged in a class 100 clean room environment, in cassette of 25pcs or single container , under a nitrogen atmosphere. |
| Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body |
| Item ID | CAS | ID | Pack | Parameter | Stock | Make up | Price |
| BK2020081712-01 | BK2020081712 | 单抛 | 4.5±0.5μm | 100 | $120 | ||
| BK2020081712-02 | BK2020081712 | 单抛 | 20±2μm | 100 | $270 | ||
| BK2020081712-03 | BK2020081712 | 双抛 | 4.5±0.5μm | 100 | $130 | ||
| BK2020081712-04 | BK2020081712 | 双抛 | 20±2μm | 100 | $280 |
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| Reminder: Beijing Beike New Material Technology Co., Ltd. supplies products only for scientific research, not for humans |
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