ID：BK2020081711
CAS：
price： $860
Item ID：BK2020081711-02
specification：
5 minutes to choose the product plan
E-mail：mxenes@163.com
| Product number | GaN-T-C-N-C100 |
| Size | Ф 100 ± 0.1 mm |
| Thickness | 4.5±0.5 μm, 20±2 μm |
| Crystal orientation | C-plane(0001) ± 0.5° |
| Conductivity type | N-type(Si-doped) |
| Resistivity (300 K) | < 0.05Ω·cm |
| Carrier concentration | > 1x1018cm-3 |
| Mobility | ~ 200cm2/V•s |
| Dislocation density | Less than 5x108 cm-2(estimated by FWHMs of XRD) |
| Substrate structure | GaN on sapphire (standard :SSP option:DSP) |
| Effective area | >90% |
| package |
Packaged in a class 100 clean room environment, in cassette of 25pcs or single container , under a nitrogen atmosphere. |
| Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body |
| Item ID | CAS | ID | Pack | Parameter | Stock | Make up | Price |
| BK2020081711-01 | BK2020081711 | 4.5±0.5μm | 100 | $660 | |||
| BK2020081711-02 | BK2020081711 | 20±2μm | 100 | $860 |
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| Reminder: Beijing Beike New Material Technology Co., Ltd. supplies products only for scientific research, not for humans |
| All rights reserved © 2019 beijing beike new material Technology Co., Ltd 京ICP备16054715-2号 |
