| Product number | GaN-FS-C-SI-S10 |
| Size | 10×10.5mm2 |
| Thickness | 350±25μm |
| Crystal orientation | C-plane(0001)off angle toward M-Axis 0.35°±0.15° |
| TTV | ≤10μm |
| Curvature | ≤10μm |
| Conductivity type | Semi-Insulating |
| Resistivity (300 K) | > 106Ω·cm |
| Dislocation density | From 1x105to 3x106cm-2 |
| Effective area | >90% |
| Polished |
Front Surface:Ra<0.2 nm(polished); or <0.3nm(polished and surface treatment for epitaxy) |
|
Back Surface:0.5~1.5μm; option:1-3nm(Fine ground);<0.2nm(polished) |
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| package |
Packaged in a class 100 clean room environment, in single container,under a nitrogen atmosphere. |
| Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body |
| Item ID | CAS | ID | Pack | Parameter | Stock | Make up | Price |
| BK2020081706-01 | BK2020081706 | Ga-抛光 | 位错密度:1~3 x 106 cm-2 | 100 | $390 | ||
| BK2020081706-02 | BK2020081706 | Ga-抛光 | 位错密度:5~9 x 105 cm-2 | 100 | $490 | ||
| BK2020081706-03 | BK2020081706 | Ga-抛光 | 位错密度:1~5 x 105 cm-2 | 100 | $790 | ||
| BK2020081706-04 | BK2020081706 | N-抛光 | 位错密度:1~3 x 106 cm-2 | 100 | $390 | ||
| BK2020081706-05 | BK2020081706 | N-抛光 | 位错密度:5~9 x 105 cm-2 | 100 | $490 | ||
| BK2020081706-06 | BK2020081706 | N-抛光 | 位错密度:1~5 x 105 cm-2 | 100 | $790 | ||
| BK2020081706-07 | BK2020081706 | Double-抛光 | 位错密度:1~3 x 106 cm-2 | 100 | $430 | ||
| BK2020081706-08 | BK2020081706 | Double-抛光 | 位错密度:5~9 x 105 cm-2 | 100 | $530 | ||
| BK2020081706-09 | BK2020081706 | Double-抛光 | 位错密度:1~5 x 105 cm-2 | 100 | $830 |
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| Reminder: Beijing Beike New Material Technology Co., Ltd. supplies products only for scientific research, not for humans |
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