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position： home > Product > Two-dimensional material micro-nano processing - in situ testing

10×10.5mm2 GaN self-supporting wafer (non-doped)





ID：BK2020081704

CAS：

price：
$740


Item ID：BK2020081704-09

specification：

5 minutes to choose the product plan

E-mail：mxenes@163.com

Detailed

Performance parameters:

Product number	GaN-FS-C-U-S10
Size	10×10.5mm²
Thickness	350±25μm
Crystal orientation	C-plane（0001）off angle toward M-Axis 0.35°±0.15°
TTV	≤10μm
Curvature	≤10μm
Conductivity type	N-type
Resistivity (300 K)	< 0.1Ω·cm
Dislocation density	From 1x10⁵ to 3x10⁶cm^-2
Effective area	>90%
Polished	Front Surface：Ra＜0.2 nm(polished); or <0.3nm(polished and surface treatment for epitaxy)
Polished	Back Surface：0.5~1.5μm; option：1-3nm(Fine ground);<0.2nm(polished)
package	Packaged in a class 100 clean room environment, in single container,under a nitrogen atmosphere.

Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body

Item ID	CAS	ID	Pack	Parameter	Stock	Make up	Price
BK2020081704-01		BK2020081704	Ga-抛光	位错密度：1~3 x 106 cm-2	100		$300
BK2020081704-02		BK2020081704	Ga-抛光	位错密度：5~9 x 105 cm-2	100		$400
BK2020081704-03		BK2020081704	Ga-抛光	位错密度：1~5 x 105 cm-2	100		$700
BK2020081704-04		BK2020081704	N-抛光	位错密度：1~3 x 106 cm-2	100		$300
BK2020081704-05		BK2020081704	N-抛光	位错密度：5~9 x 105 cm-2	100		$400
BK2020081704-06		BK2020081704	N-抛光	位错密度：1~5 x 105 cm-2	100		$700
BK2020081704-07		BK2020081704	Double-抛光	位错密度：1~3 x 106 cm-2	100		$340
BK2020081704-08		BK2020081704	Double-抛光	位错密度：5~9 x 105 cm-2	100		$440
BK2020081704-09		BK2020081704	Double-抛光	位错密度：1~5 x 105 cm-2	100		$740

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