Technical Parameters

Thickness: 50-300 nm

Appearance: Gray-black powder

Main Component: Bi0.4Sb1.6Te3

Semiconductor Type: P-type

Product Features

1. Doping with Sb element increases carrier concentration and improves electrical conductivity.

2. Excellent thermoelectric performance at room temperature, with a high figure of merit near room temperature.

3. Good electrical conductivity and relatively low thermal conductivity, which helps improve thermoelectric conversion efficiency.

Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body