风琴状材料，由氢氟酸刻蚀得到。

Organ-like material obtained by etching with HF.

literature:

Spintronic devices based on ferromagnetic semiconductors, such as non-volatile magnetic memory, have the advantages of low power consumption, fast operation speed, high storage density and strong data retention, and are expected to integrate storage and computing in the future. The fields of information technology and quantum computing have broad application prospects. Two-dimensional magnetic semiconductor materials are essential for improving the performance of spintronic devices. However, most two-dimensional materials, including graphene, do not have intrinsic ferromagnetism and need to be doped and modified to introduce magnetism. Therefore, the search for new two-dimensional magnetic semiconductors with high Curie temperature will provide an important basis for the research of spintronic devices. The research team of Professor Sun Zhimei of Beijing University of Aeronautics and Astronautics has made progress in the research of two-dimensional magnetic semiconductor materials, mainly including the following two aspects. (1) Through first-principles calculations and first-principles molecular dynamics simulation methods, we propose a new way to obtain two-dimensional intrinsic ferromagnetic semiconductors, namely by stripping antiferromagnetic van der Waals semiconductors Obtained a single-layer ferromagnetic semiconductor; and predicted a new type of two-dimensional intrinsic ferromagnetic semiconductor-single-layer CrOCl and CrOBr materials, whose Curie temperature is much higher than the two-dimensional CrI3 and Cr2Ge2Te6 reported in the literature. The calculation results show that this series of two-dimensional materials can be obtained by mechanical peeling method similar to the preparation of graphene, and has good kinetic and thermodynamic stability. This work provides a new idea for the development of a new type of two-dimensional intrinsic ferromagnets. The predicted two-dimensional ferromagnetic CrOCl and CrOBr materials are expected to be applied to non-self-rotating electronic devices. (2) Prediction of semi-metallic ferromagnetic two-dimensional Cr2C crystal and its metal-insulator phase transition induced by surface functionalization. Based on the hybrid functional density theory, we predicted the first semimetal ferromagnetic material in the MXene family, with adjustable electronic properties and magnetic Cr2C, whose charge transport is completely dominated by spin-up electrons, That is, the electron flow through Cr2C will be 100% spin-polarized. The half-metal band gap of Cr2C is as high as 2.85 eV, which ensures that the 100% spin filtering characteristics can be applied in a large bias voltage range. When the surface of Cr2C is saturated with F, OH, H or Cl atomic groups, Cr2C will undergo a transition from metal to insulator, accompanied by a ferromagnetic to antiferromagnetic transition. Therefore, by controlling the type of surface functionalized atomic groups, the energy gap width of the antiferromagnetic state can be well controlled.

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