产品:GeS2 germanium disulfide crystal
Detailed
	
	
Material name: GaGeTe
Property classification: Topological insulators, semiconductors, infrared materials, thermoelectric materials,
Band gap:0.2 eV
Synthesis method:CVT
Difficulty of peeling: Easy
Precautions for storage:The crystal is stable and does not require special storage
Crystal structure
	
	
 
	
 
	
 
	
 
	
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| Item ID | Info | 
| BK2021052402-01 | CAS: ID:BK2021052402 Pack: Parameter:>10平方毫米 Stock:100 Make up: Price:$390  | 
    
| BK2021052402-02 | CAS: ID:BK2021052402 Pack: Parameter:>25平方毫米 Stock:100 Make up: Price:$640  | 
    
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  Binary CVD TMDC crystal/powder/dispersion  
  